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M74HCT75B1R Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
M74HCT75B1R
ST-Microelectronics
STMicroelectronics 
M74HCT75B1R Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
M74HCT75
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
5 10
10
10 pF
CPD Power Dissipation
Capacitance (note
61
pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50)
WAVEFORM : PROPAGATION DELAY TIMES, MINIMUM PULSE WIDTH, SETUP AND HOLD TIMES
(f=1MHz; 50% duty cycle)
5/9

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