M58BW016FB Просмотр технического описания (PDF) - Numonyx -> Micron

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M58BW016FB

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Numonyx -> Micron 

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

Common Flash interface (CFI)

Table 28. CFI - device voltage and timing specification

Address A0-A18

1Bh

1Ch

1Dh

1Eh

1Fh

20h

21h

22h

23h-24h

25h

26h

Data

Description

27h (1)

36h(1)

B4h(2)

C6h(2)

04h

00h

0Ah

00h

VDD min, 2.7 V

VDD max, 3.6 V

VPP min

VPP max

2n ms typical time-out for Word, DWord prog – not available

2n ms, typical time-out for max buffer write – not available

2n ms, typical time-out for Erase Block

2n ms, typical time-out for chip erase – not available

Reserved

04h 2n x typical for individual block erase time-out maximum

00h 2n x typical for chip erase max time-out – not available

1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.

2. Bit7 to bit4 are coded in hexadecimal and scaled in Volts while bit3 to bit0 are in binary code decimal and

scaled in 100 mV.

Table 29. Device geometry definition

Address A0-A18

27h

28h

Data

15h

03h

Description

2n number of bytes memory size

Device interface sync./async.

29h

00h Organization sync./async.

2Ah

00h

Page size in bytes, 2n

2Bh

00h

2Ch

02h Bit7-0 = number of erase block regions in device

2Dh

1Eh

Number (n-1) of blocks of identical size; n=31

2Eh

00h

2Fh

00h Erase block region information x 256 bytes per erase block

30h

01h (64 Kbytes)

31h

07h

Number (n-1) of blocks of identical size; n=8

32h

00h

33h

20h Erase block region information x 256 bytes per erase block

34h

00h (8 Kbytes)

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