MT28S4M16B1LLFG-10 Просмотр технического описания (PDF) - Micron Technology

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производитель

MT28S4M16B1LLFG-10

SYNCFLASH® MEMORY

Micron Technology 

T0

CLK

ADVANCE

64Mb: x16, x32

SYNCFLASH MEMORY

Figure 7

Consecutive Read Bursts

T1

T2

T3

T4

T5

COMMAND

READ

NOP

NOP

ADDRESS

BANK,

COL n

NOP

READ

NOP

X = 0 cycles

BANK,

COL b

DQ

DOUT

n

CAS Latency = 1

DOUT

n+1

DOUT

n+2

DOUT

n+3

DOUT

b

T0

T1

T2

T3

T4

T5

T6

CLK

COMMAND

READ

NOP

NOP

NOP

READ

NOP

NOP

ADDRESS

BANK,

COL n

X = 1 cycle

BANK,

COL b

DQ

DOUT

n

DOUT

n+1

DOUT

n+2

DOUT

n+3

DOUT

b

CAS Latency = 2

T0

T1

T2

T3

T4

T5

T6

T7

CLK

COMMAND

READ

NOP

NOP

NOP

READ

NOP

NOP

NOP

ADDRESS

BANK,

COL n

BANK,

COL b

X = 2 cycles

DQ

DOUT

n

DOUT

n+1

DOUT

n+2

CAS Latency = 3

NOTE: Each READ command may be to either bank. DQM is LOW.

DOUT

n+3

DOUT

b

DON’T CARE

64Mb: x16, x32 SyncFlash

MT28S4M16B1LL.p65 – Rev. 1, Pub. 5/02

20

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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