Philips Semiconductors
1-chip AM radio
Product specification
TEA5551T
AC CHARACTERISTICS
All parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 °C unless otherwise specified. RF conditions:
f = 1 kHz; RL = 32 Ω; unless otherwise specified.
PARAMETER
Output power
Total harmonic distortion
Voltage gain
CONDITIONS
SYMBOL MIN.
TYP.
MAX. UNIT
THD = 10%
Po
−
25
−
mW
THD = 10%; VS = 1.8 V Po
−
8
−
mW
THD = 10%; VS = 4.5 V Po
−
60
−
mW
Po = 10 mW
THD
−
0.5
−
%
Po = 10 mW
Gv
−
32
−
dB
Noise
Noise output voltage
RS = 5 kΩ; B = 15 kHz
Vno
−
240
−
µV
HF noise output voltage
RS = 5 kΩ; B = 5 kHz;
f = 500 kHz
Vno(RF)
−
20
−
µV
Input circuit
Input impedance
Mute switch
pin 11 connected to pin 12 Zi
−
3
−
MΩ
AC impedance
(pin 13 to ground)
V5 = 0 V; I13 = 0.32 mA RS
−
200
−
Ω
October 1990
9