KU048N03D Просмотр технического описания (PDF) - KEC

Номер в каталоге

Компоненты Описание

производитель

KU048N03D

N-Ch Trench MOSFET

KEC 

KU048N03D

Fig1. ID - VDS

100

VGS=10V 5.0V 4.5V 4.0V 3.5V

80

3.0V

60

40

20

0

0

0.5 1.0 1.5 2.0 2.5 3.0

Drain to Source Voltage VDS (V)

100

VDS=5V

80

Fig3. ID - VGS

60

40

Tj=25 C

Tj=150 C

20

Tj=-55 C

0

1

2

3

4

5

Gate to Source Voltage VGS (V)

Fig5. Vth - Tj

1.6

VDS = VGS, ID = 250µA

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-75 -50 -25 0 25 50 75 100 125 150 175

Junction Temperature Tj ( C )

2010. 6. 17

Revision No : 0

Fig2. RDS(on) - ID

10

8

6

VGS=4.5V

4

VGS=10V

2

0

0

20

40

60

80

100

Drain Current ID (A)

Fig4. RDS(ON) - Tj

2.0

1.8

1.6

1.4

1.2 VGS=10V, ID=30A

1.0

0.8

0.6

VGS=4.5V, ID=30A

0.4

0.2

-75 -50 -25 0 25 50 75 100 125 150 175

Junction Temperature Tj ( C )

Fig6. IS - VSD

103

102

101

Tj=150 C

Tj=25 C

100

Tj=-55 C

10-1

0.2

0.4

0.6

0.8

1.0

1.2

Source to Drain Voltage VSD (V)

3/4

Share Link: