KTC9015S Просмотр технического описания (PDF) - KEC
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KTC9015S Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity
: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).
·Low Noise :NF=1dB(Typ.) at f=1kHz.
·Complementary to KTC9014S.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-50
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VEBO
IC
IE
PC *
Tj
Tstg
-5
-150
150
350
150
-55～150
* PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜)
UNIT
V
V
V
mA
mA
mW
℃
℃
KTC9015S
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
hFE Rank
BE Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE (Note)
Collector-Emitter Saturation Voltage
VCE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
Noise Figure
NF
Note : hFE Classification B:100～300, C:200～600
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
VCE=-6V, IC=-0.1mA, Rg=10kΩ, f=1kHz
MIN.
-
-
100
-
60
-
-
TYP.
-
-
-
-0.1
-
4.0
1.0
MAX.
-50
-100
600
-0.3
-
7.0
10
UNIT
nA
nA
V
MHz
pF
dB
2003. 3. 25
Revision No : 1
1/2
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