K8P2716UZC-QC4E Просмотр технического описания (PDF) - Samsung

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K8P2716UZC-QC4E

128Mb C-die Page NOR Flash

Samsung 

K8P2716UZC

Rev. 1.0

datasheet NOR FLASH MEMORY

In accross block boundaries and any sequence programming is allowed. A bit cannot be programmed from ’0’ back to ’1’. If attempting to do, it may cause

that device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the

data is still ’0’. Only erase operations can convert a ’0’ to a ’1’.

10.6.2 Writer Buffer Programming

Write Buffer Programming allows the system write to a maximum of 32 words in one programming operation. This results in faster effective programming

time than the standard programming algorithms. The Write Buffer Programming command sequence is initi-ated by first writing two unlock cycles. This is

followed by a third write cycle containing the Write Buffer Load command written at the block address in which programming will occur. The fourth cycle

writes the block address and the number of word locations, minus one, to be programmed. For example, if the system will program 19 unique address

locations, then 12h should be written to the device. This tells the device how many write buffer addresses will be loaded with data. The number of loca-

tions to program cannot exceed the size of the write buffer or the operation will abort. The fifth cycle writes the first address location and data to be pro-

grammed. The write-buffer-page is selected by address bits A22(max.) ~ A5 entered at fifth cycle. All subsequent address/ data pairs must fall

within the selected write-buffer-page, so that all subsequent addresses must have the same address bit A22(max.) ~ A5 as those entered at

fifth cycle. Write buffer locations may be loaded in any order.

Once the specified number of write buffer locations have been loaded, the system must then write the "Program Buffer to Flash" com mand at the block

address. Any other command address/data combination aborts the Write Buffer Programming operation. The device then begins programming. Data poll-

ing should be used while monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5, and DQ1 can be monitored to determine the

device status during Write Buffer Programming. The write-buffer programming operation can be suspended using the standard program suspend/resume

commands. Upon successful completion of the Write Buffer Programming operation, the device is ready to execute the next command.

Note also that an address loaction cannot be loaded more than once into the write-buffer-page.

WE

Address

DQ15-DQ0

RY/BY

555H

2AAH

Block

Address

Block

Address

WBL

WBL

AAH

55H

25H

12H

PD

PD

Block

Address

29H

Program

Start

Figure 4: Write Buffer Program Command Sequence

The Write Buffer Programming Sequence can be aborted in the following ways:

• Loading a value that is greater than the buffer size(32-word) during then number of word locations to Program step.

(In case, WC > 1FH @Table6)

• The number of Program address/data pairs entered is different to the number of word locations initially defined with WC (@Table 5)

• Writing a Program address to have a different write-buffer-page with selected write-buffer-page

( Address bits A22(max) ~ A5 are different)

• Writing non-exact "Program Buffer to Flash" command

The abort condition is indicated by DQ1 = 1, DQ7 = DATA (for the last address location loaded), DQ6 = toggle, and DQ5=0. A "Write-to-Buffer-Abort

Reset" command sequence must be written to reset the device for the next operation. Note that the third cycle of Write-to-Buffer-Abort Reset command

sequence is required when using Write-Buffer-Programming features in Unlock Bypass mode.

And from the third cycle to the last cycle of Write to Buffer command is also required when using Write-Buffer-Programming features in Unlock Bypass

mode.

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