K8P2716UZC-QC4E Просмотр технического описания (PDF) - Samsung

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Компоненты Описание

производитель

K8P2716UZC-QC4E

128Mb C-die Page NOR Flash

Samsung 

K8P2716UZC

Rev. 1.0

datasheet NOR FLASH MEMORY

[Table 6] K8P2716UZB Autoselect Codes

DQ15 - DQ8

CE

OE WE

A22 -

A16

A15 -

A10

A9

A8

A5

~ A6 ~ A3 A2 A1 A0 BYT BYT

A7

A4

E= E=

VIH VIL

DQ7 - DQ0

Manufacturer ID L L H

X

Read

Cycle1

L

L

H

X

X

VID X L X L L L L

X

X

VID X L X L L L H

22H

ECH

7EH

Device Read

ID Cycle2

L

L

H

X

X

VID X L X H H H L

22H

66H

Read

Cycle3

L

L

H

X

X

VID X L X H H H H

22H

60H

Block Protection

Verification

L

L

H

BA

X

VID X L X L L H L

X

01H : (Protected : Either DYB or

PPB locked)

Indicator Bit(2) L L H

X

X

VID X L X L L H H

99H : Factory Locked, Highest

block conrolled by WP

19H : NOT Factory Locked,

Highest block conrolled by WP

X

89H : Factory Locked, Lowest

block conrolled by WP

09H : NOT Factory Locked,

Lowest block conrolled by WP

DQ7 : Factory Lock Bit

Master locking

bit

L L H BA

X

VID L L L L H H H

X

Indicator Bit

01H : Protected,

00H : Unprotected

NOTE :

1) L=Logic Low=VIL, H=Logic High=VIH, VID = 8.5V to 9.5V, BA=Block Address, X=Don’t care.

Outermost block : BA127 or BA000

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