K4X51163PC Просмотр технического описания (PDF) - Samsung

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Компоненты Описание

производитель

K4X51163PC

32M x16 Mobile-DDR SDRAM

Samsung 

K4X51163PC - L(F)E/G

Mobile-DDR SDRAM

AC Overshoot/Undershoot Specification for Address & Control Pins

Parameter

Maximum peak Amplitude allowed for overshoot area

Maximum peak Amplitude allowed for undershoot area

Maximum overshoot area above VDD

Maximum undershoot area below VSS

Specification

0.9V

0.9V

3V-ns

3V-ns

Maximum Amplitude

Overshoot Area

Volts VDD

(V)

VSS

Maximum Amplitude

Undershoot Area

Time (ns)

Figure.8 AC Overshoot and Undershoot Definition for Address and Control Pins

AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins

Parameter

Maximum peak Amplitude allowed for overshoot area

Maximum peak Amplitude allowed for undershoot area

Maximum overshoot area above VDDQ

Maximum undershoot area below VSSQ

Specification

0.9V

0.9V

3V-ns

3V-ns

Maximum Amplitude

Overshoot Area

Volts VDDQ

(V)

VSSQ

Maximum Amplitude

Undershoot Area

Time (ns)

Figure.9 AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins

February 2006

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