JCS730S Просмотр технического описания (PDF) - Jilin Sino-Microelectronics
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JCS730S Datasheet PDF : 14 Pages
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS730
On-Region Characteristics
VGS
Top 15V
10V
8V
7V
10
6.5V
6V
5.5V
Bottom 5V
Transfer Characteristics
10
150℃
25℃
1
Notes：
1. 250μs pulse test
2. TC=25℃
1
1
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Notes：
1.250μs pulse test
2.VDS=40V
0.1
2
4
6
8
10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.05
1.00
0.95
VGS=10V
0.90
VGS=20V
0.85
0.80
Note ：Tj=25℃
0.75
0
1
2
3
4
5
6
7
8
ID [A]
Capacitance Characteristics
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. VGS=0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD [V]
Gate Charge Characteristics
12
V =320V
DS
10
V =200V
DS
8
V =80V
DS
6
4
2
0
0
4
8
12
16
20
24
28
32
Q Toltal Gate Charge [nC]
g
版本：201007A
5/14
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