IS62WV10248BLL-70BI Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS62WV10248BLL-70BI

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV10248BLL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

tSDR

tRDR

Parameter

VDD for Data Retention

Data Retention Current

Data Retention Setup Time

Recovery Time

Test Condition

See Data Retention Waveform

VDD = 1.2V, CS1 ≥ VDD – 0.2V

See Data Retention Waveform

See Data Retention Waveform

ISSI ®

Min. Max. Unit

1.2 3.6

V

—

20

µA

0

—

ns

tRC

—

ns

DATA RETENTION WAVEFORM (CS1 Controlled)

VDD

3.0V

tSDR

Data Retention Mode

tRDR

2.2V

VDR

CS1

GND

CS1 ≥ VDD - 0.2V

DATA RETENTION WAVEFORM (CS2 Controlled)

VDD

3.0

CS2

2.2V

VDR

0.4V

GND

Data Retention Mode

tSDR

CS2 ≤ 0.2V

tRDR

10

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

03/17/06

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