IS41LV16100B Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS41LV16100B

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution 

IS41LV16100B

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameters

Rating Unit

VT

Voltage on Any Pin Relative to GND

3.3V –0.5 to +4.6 V

VDD

Supply Voltage

3.3V –0.5 to +4.6 V

IOUT

Output Current

50

mA

PD

Power Dissipation

1

W

TA

Commercial Operation Temperature

Industrial Operation Temperature

0 to +70 °C

-40 to +85 °C

TSTG

Storage Temperature

–55 to +125 °C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

ISSI ®

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)

Symbol

VDD

VIH

VIL

TA

Parameter

Supply Voltage

Input High Voltage

Input Low Voltage

Commercial Ambient Temperature

Industrial Ambient Temperature

3.3V

3.3V

3.3V

Min. Typ.

Max.

Unit

3.0 3.3

3.6

V

2.0

— VDD + 0.3

V

–0.3 —

0.8

V

0

—

70

°C

–40 —

85

°C

CAPACITANCE(1,2)

Symbol

Parameter

Max.

CIN1

Input Capacitance: A0-A9

5

CIN2

Input Capacitance: RAS, UCAS, LCAS, WE, OE

7

CIO

Data Input/Output Capacitance: I/O0-I/O15

7

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz.

Unit

pF

pF

pF

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. B

04/13/05

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