IRFP460B Просмотр технического описания (PDF) - Vishay Semiconductors
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IRFP460B Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP460B, SiHG460B
Vishay Siliconix
80
TOP 15 V
14 V
13 V
12 V
1111 VV
60
10 V
9V
8V
7V
6V
BOTTOM 5 V
40
TJ = 25 °C
20
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
40
TOP 15 V
14 V
13 V
12 V
1111 VV
30
10 V
9V
8V
7V
6V
BOTTOM 5 V
20
TJ = 150 °C
10
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3
2.5
ID = 10 A
2
1.5
1
VGS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
10 000
1000
Ciss
100
Coss
ġ
VGS = 0 V, f = 1 MHz
Ciss
Crss
=
=
Cgs
Cgd
+
Cgdġ,
Cds
ġ
Shorted
Coss = Cds + Cgd
ġ
10
ġ
Crss
1
0
100
200
300
400
500
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
80
TJ = 25 °C
60
TJ = 150 °C
40
24
VDS = 400 V
20
VDS = 250 V
VDS = 100 V
16
12
8
20
4
0
0
5
10
15
20
25
VGS, Gate-to-Source Voltage (V)
0
0
30 60
90 120 150 180
Qg, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-0812-Rev. B, 16-Apr-12
3
Document Number: 91502
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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