IRF7105 Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

IRF7105

HEXFET® Power MOSFET

International Rectifier 

N-Channel

IRF7105

VDS , Drain-to-Source Voltage ( V )

Fig 1. Typical Output Characteristics

VDS , Drain-to-Source Voltage ( V )

Fig 2. Typical Output Characteristics

VGS , Gate-to-Source Voltage ( V )

Fig 3. Typical Transfer Characteristics

TJ , Junction Temperature ( °C )

Fig 4. Normalized On-Resistance

Vs. Temperature

VDS , Drain-to-Source Voltage ( V )

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

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QG , Total Gate Charge ( nC )

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

3

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