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H28505(1998) Просмотр технического описания (PDF) - Intersil

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H28505 Datasheet PDF : 7 Pages
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Die Characteristics
DIE DIMENSIONS:
65 mils x 52 mils x 19 mils
1650µm x 1310µm x 483µm
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL
V-
Metallization Mask Layout
-IN
+IN
HA-2850
PASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1kÅ
TRANSISTOR COUNT:
34
PROCESS:
High Frequency Bipolar Dielectric Isolation
HA-2850
V+
OUT
V-
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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