IGP30N60T Просмотр технического описания (PDF) - Infineon Technologies

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IGP30N60T

Low Loss IGBT in Trench and Fieldstop technology

Infineon Technologies 

TrenchStop Series

IGP30N60T

IGW30N60T

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

Q

S

Q

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure A. Definition of switching times

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Power Semiconductors

11

Rev. 2.2 Dec-04

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