IDT7014S20PF Просмотр технического описания (PDF) - Integrated Device Technology
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IDT7014S20PF Datasheet PDF : 7 Pages
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IDT7014S
HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
7014S12 7014S15
7014S20
7014S25 7014S35
Symbol
Parameter
READ CYCLE
tRC
Read Cycle Time
tAA
Address Access Time
tAOE Output Enable Access Time
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1, 2)
tHZ
Output High-Z Time(1, 2)
Com'l. Only Com'l. Only
Mil. Only
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
12
— 15 — 20 — 25 — 35 —
ns
—
12 — 15 —
20 — 25 — 35
ns
—
8—
8
—
10 — 12 — 20
ns
3
—3
—3
—3— 3—
ns
3
—3
—3
—3— 3—
ns
—
7—
7—
9
— 11 — 15
ns
NOTES:
1. Transition is measured ±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is determined by device characterization, but is not production tested.
2528 tbl 08
TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1,2)
ADDRESS
DATAOUT
tRC
tAA
tOH
PREVIOUS DATA VALID
tOH
DATA VALID
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(1, 3)
OE
DATAOUT
tAOE
tLZ
tHZ
VALID DATA
NOTES:
1. R/W = VIH for Read Cycles.
2. OE = VIL.
3. Addresses valid prior to OE transition LOW.
2528 drw 07
2528 drw 08
6.11
4
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