HEF4518BN Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

HEF4518BN

Dual BCD counter

Philips Electronics 

Philips Semiconductors

Dual BCD counter

Product specification

HEF4518B

MSI

AC CHARACTERISTICS

VSS = 0 V; Tamb = 25 °C; input transition times ≤ 20 ns

Dynamic power

dissipation per

package (P)

VDD

V

5

10

15

TYPICAL FORMULA FOR P (µW)

750fi + ∑ (foCL) × VDD2

3300 fi + ∑ (foCL) × VDD2

8000 fi + ∑ (foCL) × VDD2

where

fi = input freq. (MHz)

fo = output freq. (MHz)

CL = load capacitance (pF)

∑ (foCL) = sum of outputs

VDD = supply voltage (V)

Fig.4 Waveforms showing recovery time for MR; minimum CP0, CP1 and MR pulse widths.

January 1995

5

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