HAT2038 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HAT2038

Silicon N Channel Power MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

HAT2038R/HAT2038RJ

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

V

Gate to source voltage

VGSS

± 20

V

Drain current

ID

5

A

Drain peak current

I Note1

D(pulse)

40

A

Body-drain diode reverse drain current IDR

5

A

Avalanche current

HAT2038R

I Note4

AP

—

—

HAT2038RJ

5

A

Avalanche energy

HAT2038R

E Note4

AR

—

—

HAT2038RJ

2.14

mJ

Channel dissipation

Pch Note2

2

W

Channel dissipation

Pch Note3

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

– 55 to + 150

°C

Note:

1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

4. Value at Tch=25°C, Rg≥50Ω

2

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