H7P0601DL Просмотр технического описания (PDF) - Renesas Electronics
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H7P0601DL Datasheet PDF : 11 Pages
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H7P0601DL, H7P0601DS
1000
Body-Drain Diode Reverse
Recovery Time
300
100
30
10
3
diF/dt = 100 A/µs
1
-0.1 -0.3 -1
VGS = 0, Ta = 25°C
-3 -10 -30 -100
Reverse Drain Current IDR (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
1000
300
Coss
100
Crss
30
10
0 −5 −10 −15 −20 −25 −30
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
0
0
VDD = −10 V
ID = −20 A
−25 V
−50 V
−20
−4
VDS
−40
−8
−60
VDD = −50 V
−25 V
−10 V
VGS
−80
0
16 32 48 64
Gate Charge Qg (nc)
−12
−16
80
1000
300
Switching Characteristics
VGS = -10 V, VDS = −30 V
Pw = 5 µs, duty < 1 %
tr
Rg = 4.7 Ω
100
t d(off)
30
t d(on)
10
tf
30
1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Rev.1.00, Aug.05.2003, page 6 of 10
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