H7P0601DL Просмотр технического описания (PDF) - Renesas Electronics

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производитель

H7P0601DL

Silicon P-Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7P0601DL, H7P0601DS

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS –60

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage

VGS(off) –1.0

Static drain to source on state

resistance

RDS(on) —

—

Forward transfer admittance

Input capacitance

|yfs|

7.2

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Total gate charge

Qg

—

Gate to source charge

Qgs —

Gate to drain charge

Qgd —

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body-drain diode forward voltage VDF

—

Body-drain diode reverse recovery trr

—

time

Note: 1. Pulse test

Typ Max

—

—

—

—

—

±10

—

–10

—

–2.5

40

50

60

85

12

—

2200 —

220 —

130 —

37

—

6.5 —

8

—

25

—

85

—

70

—

15

—

0.95 —

30

—

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

V

ns

Test Conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = –60 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –10 A, VGS = –10 V Note1

ID = –5 A, VGS = –4.5 V Note1

ID = –10 A, VDS = –10 V Note1

VDS = –10 V

VGS = 0

f = 1 MHz

VDD = –25 V

VGS = –10 V

ID = –20 A

VGS = –10 V, ID = –10 A

RL = 3.0 Ω

Rg = 4.7 Ω

IF = –20 A, VGS = 0

IF = –20 A, VGS = 0

diF/dt = 100 A/µs

Rev.1.00, Aug.05.2003, page 3 of 10

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