GA200HS60S1 Просмотр технического описания (PDF) - International Rectifier
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GA200HS60S1 Datasheet PDF : 6 Pages
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GA200HS60S1
Bulletin I27222 03/06
16
14
12
10
8
6
4
2
typical value
0
0 300 600 900 1200 1500 1800
QG, Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
50
45
Eoff typ.
40 Tj = 25°C
Vce = 480V
35 Vge = 15V
Ic = 200A
30
Eon typ.
25 Free-wheeling
diode 30EPH06
20
0
10
20
30
40
50
RG, Gate Reistance (Ω)
Fig. 6 - Typical Switching Losses vs Gate
Resistance
80
Tj = 125°C
70 Vce = 480V
60 Vge = 15V
Vge = 10Ω
50 Free-wheeling
diode 30EPH06
40
Eoff typ.
30
20
Eon typ.
10
0
50
75 100 125 150 175 200
IC, Collector-to-Emitter Current (A)
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
4
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