FQA13N80_F109(2006) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQA13N80_F109 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
10-1
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150oC
100
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
10-1
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.8
1.5
VGS = 10V
1.2
VGS = 20V
0.9
0.6
※ Note : TJ = 25℃
0.3
0
5
10
15
20
25
30
35
40
45
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10
VDS = 400V
8
VDS = 640V
6
4
2
※ Note : ID = 12.6 A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
3
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FQA13N80 Rev. A1
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