FDS6984S Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6984S Datasheet PDF : 9 Pages
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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
trr
Reverse Recovery Time
IF = 10A,
Qrr
Reverse Recovery Charge
diF/dt = 300 A/µs
Q2
(Note 3)
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
Q2
(Note 2)
Q1
3.0 A
1.3
17
ns
12.5
nC
0.5 0.7 V
0.74 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. See “SyncFET Schottky body diode characteristics” below.
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6680S Rev C (W)
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