FDP6670S Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDP6670S Datasheet PDF : 6 Pages
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Typical Characteristics (continued)
10
ID = 31A
8
6
VDS = 10V
15V
20V
4
2
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
10us
100
RDS(ON) LIMIT
100µs
1ms
10ms
10
VGS = 10V
SINGLE PULSE
RθJC = 2.1oC/W
TA = 25oC
100ms
DC
1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
3600
3000
2400
C ISS
f = 1MHz
VGS = 0 V
1800
1200
COSS
600
CRSS
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
800
SINGLE PULSE
RθJC = 2.1°C/W
TA = 25°C
600
400
200
0
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
0.0001
0.001
0.01
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
RθJC(t) = r(t) * RθJC
RθJC = 2.1 °C/W
P(pk
t1
t2
TJ - Tc = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.1
1
FDP6670S/FDB6670S Rev E (W)
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