FDP6670S Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDP6670S Datasheet PDF : 6 Pages
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Typical Characteristics
150
VGS = 10V
120
6.0V
5.0V
90
60
4.5V
4.0V
30
3.5V
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 31A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
Figure 3. On-Resistance Variation with
Temperature.
80
VDS = 5V
60
40
TA = -55oC
25oC
125oC
20
0
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
VGS = 4.0V
1.8
1.6
4.5V
1.4
5.0V
1.2
6.0V
7.0V
8.0V
10V
1
0.8
0
30
60
90
120
150
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.027
0.022
ID = 15.5A
0.017
0.012
0.007
TA = 25oC
TA = 125oC
0.002
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
TA = 125oC
1
0.1
25oC
-55o C
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670S/FDB6670S Rev E (W)
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