FDP6670S Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDP6670S Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 25 V,
ID = 16.5 A
IAR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VGS = 0 V, ID = 1mA
ID = 26mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
VDS = VGS, ID = 1mA
ID = 26mA, Referenced to 25°C
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
VGS=10 V, ID =31 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 31 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qg s
Gate–Source Charge
Qgd
Gate–Drain Charge
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 31 A,
VGS = 5 V
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 1)
(Note 1)
(Note 2)
Min Typ Max Units
285
mJ
16.5
A
30
V
24
mV/°C
500
µA
100
nA
–100 nA
1
2.2
3
V
–4.5
mV/°C
5
8.5 mΩ
8 12.5
10
19
60
A
69
S
2639
pF
737
pF
222
pF
13
24
ns
10
21
ns
39
62
ns
35
56
ns
23
32
nC
9
nC
8
nC
0.39 0.7
V
0.48 0.9
32
nS
56
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6670S/FDB6670S Rev E (W)
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