DTA114YET1G(2011) Просмотр технического описания (PDF) - ON Semiconductor
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DTA114YET1G Datasheet PDF : 14 Pages
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IC/IB = 10
0.1
DTA114EET1 Series, SDTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1
1000
TA = -25C
100
25C
75C
VCE = 10 V
TA = 75C
25C
-25C
0.01
0
10
20
40
50
1
IC, COLLECTOR CURRENT (mA)
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4
100
75C
25C
f = 1 MHz
3
lE = 0 V
TA = 25C
10
TA = -25C
1
2
0.1
1
0.01
VO = 5 V
0
0
10
20
30
40
50
0.001
0
1 2 3
4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = -25C
25C
75C
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 7. Input Voltage versus Output Current
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