DP350T05 Просмотр технического описания (PDF) - Diodes Incorporated.
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DP350T05 Datasheet PDF : 4 Pages
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Transition Frequency
VBE(ON)
Cobo
fT
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Min
-350
-350
-5.0
⎯
⎯
20
30
30
20
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
Max
⎯
⎯
⎯
-50
-50
⎯
⎯
200
200
⎯
-0.30
-0.35
-0.50
-1.0
-0.75
-0.85
-0.90
-2.0
7.0
⎯
Unit
Test Condition
V IC = -100μA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10μA, IC = 0
nA VCB = -200V, IE = 0
nA VCE = -3.0V, IC = 0
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
⎯ IC = -30mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
IC = -10mA, IB = -1.0mA
V IC = -20mA, IB = -2.0mA
IC = -30mA, IB = -3.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
V IC = -20mA, IB = -2.0mA
IC = -30mA, IB = -3.0mA
V IC = -100mA, VCE = -10V
pF VCB = -20V, f = 1.0MHz, IE = 0
MHz VCE = -10V, IC = -20mA
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
0
-1
-10
-100
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs. Collector Current
DS30624 Rev. 7 - 2
2 of 4
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DP350T05
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