DMG1013UW Просмотр технического описания (PDF) - Diodes Incorporated.
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Компоненты Описание
производитель
DMG1013UW Datasheet PDF : 6 Pages
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1.5
VGS = -8.0V
1.2
VGS = -4.5V
VGS = -3.0V
0.9
VGS = -2.5V
0.6
VGS = -2.0V
10
8
VDS = -5V
6
4
DMG1013UW
0.3
0
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.7
VGS = -1.2V
VGS = -1.5V
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
VGS = -1.8V
VGS = -2.5V
VGS = -4.5V
0.3
0.6
0.9
1.2
1.5
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.5
VGS = -2.5V
1.3
ID = -500mA
1.1
VGS = -4.5V
ID = -1.0A
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
2
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0
TA = -55°C
0
0.5
1
1.5
2
2.5
3
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
1.0
VGS = -4.5V
0.8
TA = 150°C
0.6
TA = 125°C
TA = 85°C
TA = 25°C
0.4
TA = -55°C
0.2
0
0
0.3
0.6
0.9
1.2
1.5
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.2
1.0
0.8
VGS = -2.5V
ID = -500mA
0.6
0.4
VGS = -4.5V
ID = -1.0A
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG1013UW
Document number: DS31861 Rev. 3 - 2
3 of 6
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September 2013
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