NSVDAP222T1G(2017) Просмотр технического описания (PDF) - ON Semiconductor
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NSVDAP222T1G Datasheet PDF : 5 Pages
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DAP222, DAP202U
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 70 V
−
0.1
mAdc
Forward Voltage
VF
IF = 100 mA
−
1.2
Vdc
Reverse Breakdown Voltage
VR
IR = 100 mA
80
−
Vdc
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
−
3.5
pF
Reverse Recovery Time DAP222 trr(2)
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
−
4.0
ns
DAP202U ttt(3)
IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR
−
10.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. t = 1 mS
2. trr Test Circuit for DAP222 in Figure 4.
3. trr Test Circuit for DAP202U in Figure 5.
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
TA = 85°C
1.0
10
TA = - 40°C
0.1
1.0
TA = 25°C
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2
0
TA = 25°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
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