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GM6486-44 Просмотр технического описания (PDF) - Hynix Semiconductor

Номер в каталоге
Компоненты Описание
производитель
GM6486-44
Hynix
Hynix Semiconductor 
GM6486-44 Datasheet PDF : 7 Pages
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GM6486
In this application R must be chosen taking into account the worst operating conditions. R is determined by the
maximum number of segment activated.
R = VC VDMAX VOMIN
NMax • ID
The worst case condition for the device is when roughly half of the maximum number of segments are activated.
It must be checked that the total power dissipation does not exceed the absolute maximum ratings.
In critical cases more resistors can be used in conjuction with groups of segments. In this case the current
variation in the single resistor is reduced and plot limited.
b)
VC
In this configuration the drop on the serial connected diodes is quite stable if the diodes are properly chosen.
The total power dissipation of the ICs is, in first approximation, depending only on the number of segments
activated.
c)
VC
VOUT+VD
In this configuration VOUT+VD is constant. The total power dissipation of the IC depends only the number of
segments activated.
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