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CY7C1486BV33-167BGXC Просмотр технического описания (PDF) - Cypress Semiconductor

Номер в каталоге
Компоненты Описание
производитель
CY7C1486BV33-167BGXC
Cypress
Cypress Semiconductor 
CY7C1486BV33-167BGXC Datasheet PDF : 34 Pages
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CY7C1480BV33
CY7C1482BV33, CY7C1486BV33
The truth table for CY7C1480BV33, CY7C1482BV33, and CY7C1486BV33 follows.[2, 3, 4, 5, 6
Truth Table
Operation
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle,Suspend Burst
Write Cycle,Suspend Burst
Add. Used
None
None
None
None
None
None
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK DQ
H X XL X
L
X
X
X L-H Tri-State
L L XL L
X
X
X
X L-H Tri-State
L X HL L
X
X
X
X L-H Tri-State
L L XL H
L
X
X
X L-H Tri-State
L X HL H
L
X
X
X L-H Tri-State
X X XH X
X
X
X
X X Tri-State
L H LL L
X
X
X
L L-H Q
L H LL L
X
X
X
H L-H Tri-State
L H LL H
L
X
L
X L-H D
L H LL H
L
X
H
L L-H Q
L H LL H
L
X
H
H L-H Tri-State
X X XL H
H
L
H
L L-H Q
X X XL H
H
L
H
H L-H Tri-State
H X XL X
H
L
H
L L-H Q
H X XL X
H
L
H
H L-H Tri-State
X X XL H
H
L
L
X L-H D
H X XL X
H
L
L
X L-H D
X X XL H
H
H
H
L L-H Q
X X XL H
H
H
H H L-H Tri-State
H X XL X
H
H
H
L L-H Q
H X XL X
H
H
H H L-H Tri-State
X X XL H
H
H
L
X L-H D
H X XL X
H
H
L
X L-H D
Notes
2. X = Do Not Care, H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW = L. WRITE = H when all Byte write enable signals, BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the
ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to allow the outputs to tri-state. OE is a do not care for
the remainder of the write cycle.
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive
or when the device is deselected, and all data bits behave as outputs when OE is active (LOW).
Document #: 001-15145 Rev. *A
Page 10 of 34
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