CY7C1046BL-15VC Просмотр технического описания (PDF) - Cypress Semiconductor
Номер в каталоге
Компоненты Описание
производитель
CY7C1046BL-15VC Datasheet PDF : 8 Pages
| |||
CY7C1046B
AC Test Loads and Waveforms
R1 481Ω
5V
R1 481 Ω
Vcc
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
OUTPUT
R2
255 Ω
5 pF
INCLUDING
JIG AND
SCOPE
(b)
GND
R2
255 Ω Rise Time:1 V/ns
1046B–3
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
167Ω
1.73V
ALL INPUT PULSES
90%
10%
90%VCC
10%VCC
Fall Time:1 V/ns
1046B–4
Switching Characteristics[4] Over the Operating Range
7C1046B-12
7C1046B-15
7C1046B-20
Parameter
Description
Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tpower
VCC(typical) to the first access[5]
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
OE LOW to Data Valid
OE LOW to Low Z[7]
OE HIGH to High Z[6, 7]
CE LOW to Low Z[7]
CE HIGH to High Z[6, 7]
tPU
CE LOW to Power-Up
tPD
CE HIGH to Power-Down
WRITE CYCLE[8, 9]
1
1
1
µs
12
15
20
ns
12
15
20
ns
3
3
3
ns
12
15
20
ns
6
7
8
ns
0
0
0
ns
6
7
8
ns
3
3
3
ns
6
7
8
ns
0
0
0
ns
12
15
20
ns
tWC
Write Cycle Time
12
15
20
ns
tSCE
CE LOW to Write End
8
10
15
ns
tAW
Address Set-Up to Write End
8
10
15
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-Up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
8
10
12
ns
tSD
Data Set-Up to Write End
6
8
10
ns
tHD
tLZWE
tHZWE
Data Hold from Write End
WE HIGH to Low Z[7]
WE LOW to High Z[6, 7]
0
0
0
ns
3
3
3
ns
6
7
8
ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
5. This part has a voltage regulator which steps down the voltage from 5V to 3.3V internally. tpower time has to be provided initially before a read/write operation
is started.
6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of
these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05144 Rev. **
Page 3 of 8
Share Link: 