QSBT40-7 Просмотр технического описания (PDF) - Diodes Incorporated.

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QSBT40-7

QUAD DATA LINE SCHOTTKY BUS TERMINATOR

Diodes Incorporated. 

QSBT40

QUAD DATA LINE SCHOTTKY BUS TERMINATOR

Features

· Low Forward Voltage Drop

· Fast Switching

A

· Very High Density

· Ultra-Small Surface Mount Package

· PN Junction Guard Ring for Transient and

ESD Protection

TOP VIEW

BC

· Provide transient protection for high-speed data

lines in accordance with:

G

IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)

H

IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)

IEC61000-4-5 (Lightning) Class 3

K

M

J

Mechanical Data

· Case: SOT-363, Molded Plastic

· Case material - UL Flammability Rating 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Polarity: See Diagram

· Weight: 0.006 grams (approx.)

· Marking Code: KST (See Page 2)

Maximum Ratings @ TA = 25°C unless otherwise specified

DF

L

DL1 VCC DL2

DL4 GND DL3

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t < 1.0s

Power Dissipation (Note 1)

Thermal Resistance Junction to Ambient Air (Note 1)

Operating Temperature Range

Storage Temperature Range

Symbol

VRRM

VRWM

VR

IFM

IFSM

Pd

RqJA

Tj

TSTG

Value

30

200

600

200

625

-55 to +125

-65 to +125

SOT-363

Dim Min Max

A

0.10 0.30

B

1.15 1.35

C

2.00 2.20

D

0.65 Nominal

F

0.30 0.40

H

1.80 2.20

J

¾ 0.10

K

0.90 1.00

L

0.25 0.40

M

0.10 0.25

a

0°

8°

All Dimensions in mm

Unit

V

mA

mA

mW

°C/W

°C

°C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 2)

Forward Voltage (Note 2)

Reverse Current (Note 2)

Total Capacitance (Note 3)

Reverse Recovery Time

Symbol Min

V(BR)R

30

VF

¾

IR

¾

CT

¾

trr

¾

Typ

¾

¾

¾

10.0

¾

Max

¾

280

350

450

550

1000

2

¾

5.0

Unit

V

mV

mA

pF

ns

Test Condition

IR = 100mA

IF = 0.1mA, tp < 300µS

IF = 1.0mA, tp < 300µS

IF = 10mA, tp < 300µS

IF = 30mA, tp < 300µS

IF = 100mA, tp < 300µS

VR = 25V

VR = 0, f = 1.0MHz

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100W

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. At VR= 0V, DL(X) to VCC or GND.

DS30195 Rev. 7 - 2

1 of 2

QSBT40

www.diodes.com

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