BZV49-C10 Просмотр технического описания (PDF) - NXP Semiconductors.
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производитель
BZV49-C10 Datasheet PDF : 10 Pages
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BZV49-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
MIN. MAX. TYP.
MAX.
27
25.1 28.9
25
80
30
28.0 32.0
30
80
33
31.0 35.0
35
80
36
34.0 38.0
35
90
39
37.0 41.0
40
130
43
40.0 46.0
45
150
47
44.0 50.0
50
170
51
48.0 54.0
60
180
56
52.0 60.0
70
200
62
58.0 66.0
80
215
68
64.0 72.0
90
240
75
70.0 79.0
95
255
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
MIN. TYP. MAX.
21.4 23.4 25.3
2
24.4 26.6 29.4
2
27.4 29.7 33.4
2
30.4 33.0 37.4
2
33.4 36.4 41.2
2
37.6 41.2 46.6
2
42.0 46.1 51.8
2
46.6 51.0 57.2
2
52.2 57.0 63.8
2
58.8 64.4 71.6
2
65.6 71.7 79.8
2
73.4 80.2 88.6
2
MAX.
50
50
45
45
45
40
40
40
40
35
35
35
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (μA)
VR
MAX.
(V)
0.05 18.9
0.05 21.0
0.05 23.1
0.05 25.2
0.05 27.3
0.05 30.1
0.05 32.9
0.05 35.7
0.05 39.2
0.05 43.4
0.05 47.6
0.05 52.5
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
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