BYQ30EX Просмотр технического описания (PDF) - Philips Electronics
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BYQ30EX Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ30EX series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
a1
a2
1
3
k2
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYQ30EX series is supplied in
the conventional leaded SOT186A
package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab isolated
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.95 V
IO(AV) = 16 A
IRRM ≤ 0.2 A
trr ≤ 25 ns
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
BYQ30EX
-
-
-
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Average rectified output current square wave
-
(both diodes conducting)1
δ = 0.5; Ths ≤ 59 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
Ths ≤ 59 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse tp = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
16
16
100
110
UNIT
V
V
V
A
A
A
A
0.2
A
0.2
A
150
˚C
150
˚C
MIN.
-
MAX.
8
UNIT
kV
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.200
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