BYG10MHE3TR3 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
BYG10MHE3TR3 Datasheet PDF : 5 Pages
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BYG10D thru BYG10Y
Vishay General Semiconductor
2000
1600
1200
800
TA = 100 °C
TA = 125 °C
TA = 75 °C
TA = 50 °C
TA = 25 °C
400
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Figure 7. Reverse Recovery Charge vs. Forward Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88957
Revision: 03-Jun-09
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