BUZ908P Просмотр технического описания (PDF) - Unspecified

Номер в каталоге

Компоненты Описание

производитель

BUZ908P

P–CHANNEL POWER MOSFET

Unspecified 

MAGNA

TEC

BUZ907P

BUZ908P

MECHANICAL DATA

Dimensions in mm

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

P–CHANNEL

POWER MOSFET

0.40 (0.016)

0.79 (0.031)

2.21 (0.087)

2.59 (0.102)

Pin 1 – Gate

POWER MOSFETS FOR

AUDIO APPLICATIONS

3.55 (0.140)

3.81 (0.150)

1

1.01 (0.040)

1.40 (0.055)

TO-247

Pin 2 – Source

Case– Source

23

1.65 (0.065)

2.13 (0.084)

2.87 (0.113)

3.12 (0.123)

5.25 (0.215)

BSC

Pin 3 – Drain

FEATURES

• HIGH SPEED SWITCHING

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODES

• COMPLIMENTARY N–CHANNEL

BUZ902P & BUZ903P

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated)

VDSX

Drain – Source Voltage

VGSS

Gate – Source Voltage

ID

Continuous Drain Current

ID(PK)

Body Drain Diode

PD

Total Power Dissipation

@ Tcase = 25°C

Tstg

Storage Temperature Range

Tj

Maximum Operating Junction Temperature

RθJC

Thermal Resistance Junction – Case

BUZ907P

-220V

BUZ908P

-250V

±14V

-8A

-8A

125W

–55 to 150°C

150°C

1°C/W

Magnatec. Telephone (01455) 554711. Fax (01455) 558843

Prelim. 01/97

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