BUK9606-40B Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9606-40B Datasheet PDF : 14 Pages
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BUK9606-40B
N-channel TrenchMOS logic level FET
300
10
7
ID
6
(A) 5
200
100
0
0
2
03nm18
4.8
Label is VGS (V)
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
4
6
8
10
VDS (V)
12
RDSon
(mΩ)
10
8
6
4
3
03nm17
7
11
15
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10−1
ID
(A)
10−2
10−3
10−4
03ng53
min
typ
max
140
gfs
(S)
105
70
03nm15
35
10−5
10−6
0
1
2
3
VGS (V)
0
0
20
40
60
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9606-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 February 2011
© Nexperia B.V. 2017. All rights reserved
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