BUK9506-55A Просмотр технического описания (PDF) - Philips Electronics
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BUK9506-55A Datasheet PDF : 16 Pages
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Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25 °C; VGS = 5 V; ID = 25 A
Tj = 25 °C; VGS = 4.5 V; ID = 25 A
Tj = 25 °C; VGS = 10 V; ID = 25 A
Typ
−
[1] −
−
−
5.3
5.5
4.8
Max Unit
55
V
154
A
300
W
175
°C
6.3
mΩ
6.7
mΩ
5.8
mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
pulsed reverse drain current
Avalanche ruggedness
WDSS non-repetitive avalanche energy
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A;
VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Min
−
−
−
[1] −
[2] −
[2] −
−
−
−55
−55
[1] −
[2] −
−
−
Max Unit
55
V
55
V
±15
V
154
A
75
A
75
A
616
A
300
W
+175 °C
+175 °C
154
A
75
A
616
A
1.1
J
9397 750 08416
Product data
Rev. 03 — 23 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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