BUK7510-55AL Просмотр технического описания (PDF) - Philips Electronics
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BUK7510-55AL Datasheet PDF : 14 Pages
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Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
400
ID
(A) 20
18
300 16
14
12
200
100
0
0
2
003aaa729
VGS (V) = 10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
18
RDSon
(mΩ)
14
003aaa730
10
6
5
10
15 VGS (V) 20
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
003aaa731
2
7 8 9 10
RDSon
a
(mΩ)
15
1.5
03ne89
10
1
VGS (V) = 20
5
0.5
0
0
100
200
300
400
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R----D----S--o---n--------
RDSon(25°C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 14362
Product data sheet
Rev. 01 — 31 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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