BUK7510-55AL Просмотр технического описания (PDF) - Philips Electronics

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BUK7510-55AL

N-channel TrenchMOS™ standard level FET

Philips Electronics 

BUK75/7610-55AL

N-channel TrenchMOS™ standard level FET

Rev. 01 — 31 March 2005

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode field-effect power transistor in a plastic package using

Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically

optimized for linear operation.

1.2 Features

s TrenchMOS™ technology

s 175 °C rated

s Q101 compliant

s Stable operation in linear mode.

1.3 Applications

s Automotive systems

s DC linear motor control

s Repetitive clamped inductive

switching

s 12 V and 24 V loads.

1.4 Quick reference data

s EDS(AL)S ≤ 1.1 J

s ID ≤ 75 A

2. Pinning information

s RDSon = 8.5 mΩ (typ)

s Ptot ≤ 300 W.

Table 1: Pinning

Pin Description

1 gate (G)

2 drain (D)

3 source (S)

mb mounting base;

connected to drain (D)

Simplified outline

mb

mb

2

13

SOT404 (D2PAK)

Symbol

D

G

mbb076 S

123

SOT78 (TO-220AB)

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