BTA10-600CRG(2017) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

BTA10-600CRG
(Rev.:2017)

10 A SnubberlessTM, logic level and standard Triacs

STMicroelectronics 

Characteristics

BTA10, BTB10, T10xx

1

Characteristics

Table 2: Absolute maximum ratings

Symbol

Parameter

IT(RMS)

ITSM

I2t

dl/dt

VDSM/VRSM

RMS on-state current (full sine

wave)

Non repetitive surge peak on-

state current (full cycle, Tj initial

= 25 °C)

I2t value for fusing

Critical rate of rise of on-state

current

IG = 2 x IGT , tr ≤ 100 ns

Non repetitive surge peak off-

state voltage

TO-220AB

TO-220AB Ins.

F = 50 Hz

F = 60 Hz

tp = 10 ms

F = 120 Hz

tp = 10 ms

Tc = 105 °C

Tc = 95 °C

tp = 20 ms

tp = 16.7 ms

Tj = 125 °C

Tj = 25 °C

IGM

PG(AV)

Tstg

Tj

Peak gate current

tp = 20 µs

Average gate power dissipation

Storage junction temperature range

Operating junction temperature range

Tj = 125 °C

Tj = 125 °C

Value

10

100

105

55

Unit

A

A

A2s

50

A/µs

VDRM/VRRM

+ 100

V

4

A

1

W

-40 to +150 °C

-40 to +125 °C

Symbol

VT(1)

VTO

RD

IDRM/IRRM

Table 3: Static electrical characteristics

Test Conditions

Tj

ITM = 14 A, tp = 380 µs

25 °C Max.

threshold on-state voltage

125 °C Max.

Dynamic resistance

125 °C Max.

VDRM = VRRM

25 °C

Max.

125 °C

Notes:

(1)For both polarities of A2 referenced to A1

Value

1.55

0.85

40

5

1

Unit

V

V

mΩ

µA

mA

2/14

DocID2937 Rev 7

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