9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.015 A; V GS=0 V
60
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=3 V; I D=56 µA
parameter: I D
0
BSS139
50
-0.5
40
%98
30
-1
%98
-1.5
typ
20
typ
10
-2
%2
-2.5
0
-60
-20
20
60 100 140 180
T j [°C]
-3
-60 -20
20
60 100 140 180
T j [°C]
11 Threshold voltage bands
I D=f(V GS); V DS=3 V; T j=25 °C
12 Typ. capacitances
C =f(V DS); V GS=-3 V; f =1 MHz
10
1000
1
0.1
0.01
-2
Rev. 1.7
M
N
L
K
J
-1.5
-1
V GS [V]
100
Ciss
10
56 µA
Coss
Crss
1
-0.5
0
page 6
5
10
15
20
25
30
V DS [V]
2009-08-18