BSS139 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BSS139

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - ambient

Symbol Conditions

BSS139

min.

Values

typ.

Unit

max.

R thJA minimal footprint

-

-

350 K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source cutoff current

Gate-source leakage current

On-state drain current

Drain-source on-state resistance

Transconductance

V (BR)DSS V GS=-3 V, I D=250 µA

250

-

V GS(th) V DS=3 V, I D=56 µA

-2.1

I D(off)

V DS=250 V,

V GS=-3 V, T j=25 °C

-

V DS=250 V,

V GS=-3 V, T j=125 °C

I GSS

V GS=20 V, V DS=0 V

I DSS

V GS=0 V, V DS=10 V

R DS(on) V GS=0 V, I D=15 mA

V GS=10 V,I D=0.1 mA

g fs

|V DS|>2|I D|R DS(on)max,

I D=0.08 A

-

-

30

-

-

0.060

-1.4

-

-

-

-

12.5

7.8

0.13

-V

-1

0.1 µA

10

10 nA

- mA

30 Ω

14

-S

Threshold voltage V GS(th) sorted in bands2)

J

V GS(th) V DS=3 V, I D=56 µA

-1.2

-

-1 V

K

-1.35

-

-1.15

L

-1.5

-

-1.3

M

-1.65

-

-1.45

N

-1.8

-

-1.6

2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific

band cannot be ordered separately.

Rev. 1.7

page 2

2009-08-18

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