BSM100GB170DLC Просмотр технического описания (PDF) - eupec GmbH

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производитель

BSM100GB170DLC

IGBT-Modules

eupec GmbH 

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

BSM 100 GB 170 DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor

Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

Anstiegszeit (induktive Last)

rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)

turn off delay time (inductive load)

Fallzeit (induktive Last)

fall time (inductive load)

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

Kurzschlußverhalten

SC Data

Modulinduktivität

stray inductance module

IC = 100A, VCE = 900V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 100A, VCE = 900V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 100A, VCE = 900V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 100A, VCE = 900V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 100A, VCE = 900V, VGE = 15V

RG = 15Ω, Tvj = 125°C, LS = 60nH

IC = 100A, VCE = 900V, VGE = 15V

RG = 15Ω, Tvj = 125°C, LS = 60nH

tP ≤ 10µsec, VGE ≤ 15V, RG = 15Ω

TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt

Modulleitungswiderstand, Anschlüsse - Chip

module lead resistance, terminals - chip

pro Zweig / per arm

min. typ. max.

td,on

-

0,1

-

µs

-

0,1

-

µs

tr

-

0,1

-

µs

-

0,1

-

µs

td,off

-

0,8

-

µs

-

0,9

-

µs

tf

-

0,03

-

µs

-

0,03

-

µs

Eon

-

50

-

mWs

Eoff

-

30

-

mWs

ISC

LsCE

-

400

-

A

-

30

-

nH

RCC’+EE’

-

0,6

-

mΩ

Charakteristische Werte / Characteristic values

Diode / Diode

Durchlaßspannung

forward voltage

Rückstromspitze

peak reverse recovery current

Sperrverzögerungsladung

recovered charge

Abschaltenergie pro Puls

reverse recovery energy

IF = 100A, VGE = 0V, Tvj = 25°C

IF = 100A, VGE = 0V, Tvj = 125°C

IF = 100A, - diF/dt = 1100A/µsec

VR = 900V, VGE = -10V, Tvj = 25°C

VR = 900V, VGE = -10V, Tvj = 125°C

IF = 100A, - diF/dt = 1100A/µsec

VR = 900V, VGE = -10V, Tvj = 25°C

VR = 900V, VGE = -10V, Tvj = 125°C

IF = 100A, - diF/dt = 1100A/µsec

VR = 900V, VGE = -10V, Tvj = 25°C

VR = 900V, VGE = -10V, Tvj = 125°C

min. typ. max.

VF

-

2,1

2,5

V

-

2,1

2,5

V

IRM

-

70

-

A

-

105

-

A

Qr

-

23

-

µAs

-

40

-

µAs

Erec

-

11

-

mWs

-

20

-

mWs

2(8)

BSM100GB170DLC

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