BS209 Просмотр технического описания (PDF) - General Semiconductor

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BS209

DMOS Transistors (P-Channel)

General Semiconductor 

BS209

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at –ID = 100 µA, VGS = 0 V

–V(BR)DSS

400

430

–

V

Gate-Body Leakage Current, Forward

at –VGSF = 20 V, VDS = 0 V

Gate-Body Leakage Current, Reverse

at –VGSR = 20 V, VDS = 0 V

Drain Cutoff Current

at –VDS = 400 V, VGS = 0 V

Gate-Source Threshold Voltage

at VGS = VDS, –ID = 250 µA

Drain-Source ON Resistance

at –VGS = 5 V, –ID = 120 mA

–IGSSF

–

–IGSSR

–

–IDSS

–

–VGS(th)

1

RDS(on)

–

–

100

nA

–

100

nA

–

500

nA

1.5

2.5

V

50

60

Ω

Capacitance

at –VDS = 25 V, VGS = 0, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

CiSS

–

200

–

pF

COSS

–

30

–

pF

CrSS

–

10

–

pF

Switching Times

at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω

Turn-On Time

ton

Turn-Off Time

toff

–

10

–

ns

–

50

–

ns

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1501)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

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