NXP Semiconductors
BLF573; BLF573S
HF / VHF power LDMOS transistor
60
PL
(dBm)
58
56
54
001aaj614
Ideal PL
(2)
(1)
PL
52
50
24
26
28
30
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
(1) PL(1dB) = 55.2 dBm (330 W)
(2) PL(3dB) = 55.8 dBm (380 W)
Fig 6. Load power as function of input power; typical values
32
34
Pi (dBm)
BLF573_BLF573S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
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