BLF573 Просмотр технического описания (PDF) - NXP Semiconductors.
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BLF573 Datasheet PDF : 16 Pages
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NXP Semiconductors
BLF573; BLF573S
HF / VHF power LDMOS transistor
8. Test information
8.1 RF Performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
30
Gp
(dB)
28
Gp
26
ηD
24
001aaj612 80
30
ηD
Gp
(7)
(%)
(dB)
(6)
(5)
60
28
(1)
40
26
(2)
(3)
(4)
20
24
001aaj613
22
0
0
100
200
300
400
PL (W)
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
Fig 4. Power gain and drain efficiency as functions
of load power; typical values
22
0
100
200
300
400
PL (W)
VDS = 50 V; f = 225 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
Fig 5. Power gain as function of load power; typical
values
BLF573_BLF573S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
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